Company : Germanium Power Devices 300 Brickstone Sq., P.O. Box 3065 Andower, MA01810, USA Phone: 508/475-5982
Web Site : http://www.gpd-ir.com
About:GPD has been a manufacturer of power and high speed Germanium transistors and diodes since 1973 and a manufacturer of infrared photodetectors since 1985. GPD offers Ge, p-n, p-i-n, APD and InGaAs p-i-n high speed and large area photodetectors for radiation detection and telecommunication applications. GPD maintains an inspection system in accordance with MIL-I-45208. Photodiodes are subjected to Telcordia testing requirements (TA-NWT-00093), MIL-STD-883 test methods and/or customer specifications.
Type V ceo V cbo L c h fe
2N1330 Ucb: 45V Ucb: 60V Ic: 3A Hfe: 40MIN
2N1331 Ucb: 80V Ucb: 80V Ic: 3A Hfe: 30MIN
2N1332 Ucb: 60V Ucb: 80V Ic: 3A Hfe: 40MIN
2N1333 Ucb: 100V Ucb: 100V Ic: 3A Hfe: 30MIN
2N1334 Ucb: 80V Ucb: 100V Ic: 3A Hfe: 30MIN
2N141 Ucb: 30V Ucb: 60V Ic: 800mA Hfe: 10MIN
2N141-13 Ucb: 30V Ucb: 60V Ic: 1A Hfe: 25MIN
2N142 Ucb: 30V Ucb: 60V Ic: 800mA Hfe: 10MIN
2N142-13 Ucb: 60V Ucb: 60V Ic: 800mA Hfe: 30T
2N143 Ucb: 30V Ucb: 60V Ic: 1A Hfe: 10MIN
2N143-13 Ucb: 30V Ucb: 60V Ic: 1A Hfe: 10MIN
2N1430 Ucb: 100V Ucb: 100V Ic: 10A Hfe: 30/120
2N144 Ucb: 30V Ucb: 60V Ic: 800mA Hfe: 10MIN
2N144-13 Ucb: 60V Ucb: 60V Ic: 800mA Hfe: 10MIN
2N145 Ucb: - Ucb: 20V Ic: 5mA Hfe: 30T
2N156 Ucb: 30V Ucb: 30V Ic: 3A Hfe: 25MIN
2N158 Ucb: 60V Ucb: 60V Ic: 3A Hfe: 21MIN
2N158A Ucb: 60V Ucb: 80V Ic: 3A Hfe: 21MIN
2N1658 Ucb: 50V Ucb: 80V Ic: 1A Hfe: 30/90
2N1658-13 Ucb: 50V Ucb: 80V Ic: 1A Hfe: 30/90