Company : Germanium Power Devices 300 Brickstone Sq., P.O. Box 3065 Andower, MA01810, USA Phone: 508/475-5982
Web Site : http://www.gpd-ir.com
About:GPD has been a manufacturer of power and high speed Germanium transistors and diodes since 1973 and a manufacturer of infrared photodetectors since 1985. GPD offers Ge, p-n, p-i-n, APD and InGaAs p-i-n high speed and large area photodetectors for radiation detection and telecommunication applications. GPD maintains an inspection system in accordance with MIL-I-45208. Photodiodes are subjected to Telcordia testing requirements (TA-NWT-00093), MIL-STD-883 test methods and/or customer specifications.
Type V ceo V cbo L c h fe
2N1172 Ucb: 30V Ucb: 40V Ic: 1.5A Hfe: 30/90
2N1182 Ucb: 60V Ucb: 60V Ic: 400mA Hfe: 30/85
2N1183 Ucb: 20V Ucb: 45V Ic: 3A Hfe: 20/60
2N1183A Ucb: 30V Ucb: 60V Ic: 3A Hfe: 20/60
2N1183B Ucb: 40V Ucb: 80V Ic: 3A Hfe: 20/60
2N1184 Ucb: 20V Ucb: 45V Ic: 3A Hfe: 40/120
2N1184A Ucb: 30V Ucb: 60V Ic: 3A Hfe: 40/120
2N1184B Ucb: 40V Ucb: 80V Ic: 3A Hfe: 40/120
2N1201 Ucb: 14V Ucb: 20V Ic: 50mA Hfe: 7/200
2N1202 Ucb: 60V Ucb: 80V Ic: 3.5A Hfe: 40/120
2N1320 Ucb: 30V Ucb: 35V Ic: 3A Hfe: 40MIN
2N1321 Ucb: 30V Ucb: 35V Ic: 3A Hfe: 30MIN
2N1322 Ucb: 40V Ucb: 60V Ic: 3A Hfe: 40MIN
2N1323 Ucb: 45V Ucb: 60V Ic: 3A Hfe: 30MIN
2N1324 Ucb: 80V Ucb: 80V Ic: 3A Hfe: 40MIN
2N1325 Ucb: 60V Ucb: 80V Ic: 3A Hfe: 30MIN
2N1326 Ucb: 100V Ucb: 100V Ic: 3A Hfe: 40MIN
2N1327 Ucb: 80V Ucb: 100V Ic: 3A Hfe: 30MIN
2N1328 Ucb: 30V Ucb: 35V Ic: 3A Hfe: 40MIN
2N1329 Ucb: 30V Ucb: 35V Ic: 3A Hfe: 30MIN